تفاصيل المنتج
مكان المنشأ: الصين
اسم العلامة التجارية: ZMSH
إصدار الشهادات: rohs
رقم الموديل: 6 بوصة SiC Epitaxial رقاقة
شروط الدفع والشحن
الحد الأدنى لكمية: 25
الأسعار: by case
تفاصيل التغليف: حزمة في غرفة تنظيف 100 درجة
وقت التسليم: 5-8 اسابيع
شروط الدفع: T/T
القدرة على العرض: 1000 قطعة في الشهر
هيكل بلوري: |
4H SIC بلورة واحدة |
الحجم: |
6 بوصة |
قطرها: |
150 ملم |
المقاومة النوعية: |
0.015-0.15 Ω · سم (قابل للتعديل) |
استثناء الحافة: |
3 ملم |
تطبيق: |
سيارات الطاقة الجديدة ， الصناعية والطاقة |
هيكل بلوري: |
4H SIC بلورة واحدة |
الحجم: |
6 بوصة |
قطرها: |
150 ملم |
المقاومة النوعية: |
0.015-0.15 Ω · سم (قابل للتعديل) |
استثناء الحافة: |
3 ملم |
تطبيق: |
سيارات الطاقة الجديدة ， الصناعية والطاقة |
6inch SiC Epitaxial Wafer Diameter 150mm N type P type for 5G Communication
As a core material for silicon carbide (SiC) power device manufacturing, the 6-inch 4H-SiC epitaxial wafer is based on a 4H-N-type SiC substrate, grown using chemical vapor deposition (CVD) to achieve high uniformity, low defect density, and exceptional electrical performance. Its technical advantages include:
· Crystal Structure: (0001) silicon-face orientation with a 4° offcut to optimize lattice matching and minimize micropipe/stacking fault defects.
· Electrical Performance: N-type doping concentration precisely controlled between 2×10¹⁴–2×10¹⁹ cm⁻³ (±14% tolerance), achieving resistivity adjustable from 0.015–0.15 Ω·cm via in-situ doping technology.
· Defect Control: Surface defect density <25 cm⁻² (TSD/TED), triangular defect density <0.5 cm⁻², ensured by magnetic-field-assisted growth and real-time monitoring.
Leveraging domestically developed CVD equipment clusters, ZMSH achieves full-process control from substrate processing to epitaxial growth, supporting rapid small-batch trials (minimum 50 wafers) and customized solutions for applications in new energy vehicles, photovoltaic inverters, and 5G base stations.
| Parameter | Specification |
| Diameter | 150 mm (±0.2 mm) |
| Thickness | 50–100 μm (high voltage) |
| Doping Concentration (N) | 2×10¹⁴–2×10¹⁹ cm⁻³ |
| Surface Defect Density | <25 cm⁻² (TSD/TED) |
| Resistivity | 0.015–0.15 Ω·cm (adjustable) |
| Edge Exclusion | 3 mm |
1. Material Performance
· Thermal Conductivity: >350 W/m·K, ensuring stable operation at >200°C, 3× higher than silicon.
· Breakdown Field Strength: >3 MV/cm, enabling 10kV+ high-voltage devices with optimized thickness (10–100 μm).
· Carrier Mobility: Electron mobility >900 cm²/(V·s), enhanced by gradient doping for faster switching.
2. Process Advantages
· Thickness Uniformity: <3% (9-point test) via dual-temperature zone reactors, supporting 5–100 μm thickness control.
· Surface Quality: Ra <0.5 nm (atomic force microscopy, AFM), optimized by hydrogen etching and chemical mechanical polishing (CMP).
· Defect Density: Micropipe density <1 cm⁻², minimized through reverse-bias annealing.
3. Customization Capabilities
· Crystal Orientation: Supports (0001) silicon-face, (11-20) carbon-face, and quasi-homoepitaxial growth for trench MOSFETs and JBS diodes.
· Packaging Compatibility: Offers double-sided polishing (Ra <0.5 nm) and wafer-level packaging (WLP) for TO-247/DFN.
1. Renewable Energy Systems
· Wind Turbine Inverters: 1700V SiC epitaxial wafers for DC-AC conversion in large-scale wind turbines, enhancing energy conversion efficiency to 99.2% and reducing DC-side losses by 15% .
· Hybrid Energy Storage: 10kV SiC modules for bidirectional DC-DC converters in grid-scale battery storage systems, enabling seamless energy transfer between solar/wind and grid networks.
2. Data Center Power Infrastructure
· Ultra-Efficient PDU: 650V SiC MOSFETs integrated into power distribution units (PDUs), achieving 98% efficiency and reducing cooling costs by 20% through lower heat dissipation .
· Smart Power Grids: 3300V SiC thyristors for high-voltage DC (HVDC) transmission in data center microgrids, minimizing transmission losses to <0.3%.
3. Industrial Motor Drives
· High-Power AC Drives: 1200V SiC IGBT modules for industrial motor drives in steel manufacturing, enabling variable-speed control with 97% efficiency and reducing energy waste by 12% .
· Electric Forklifts: 400V SiC-based inverters for compact, high-performance electric forklifts, extending operational time by 30% via reduced energy consumption.
4. Aerospace Power Systems
· Auxiliary Power Units (APUs): Radiation-tolerant 6H-SiC epitaxial wafers for APU inverters in aircraft, operating reliably at -55°C to 225°C and passing MIL-STD-883 radiation hardness tests.
ZMSH services & product portfolio Our core business encompasses comprehensive coverage of 2–12-inch SiC substrates and epitaxial wafers, including 4H/6H-N-type, HPSI, SEMI-type, and 3C-N-type polytypes, with advanced capabilities in custom fabrication (e.g., through-hole cutting, double-side polishing, wafer-level packaging) and end-to-end solutions spanning CVD epitaxy, ion implantation, annealing, and device validation. Leveraging 75% domestically sourced CVD equipment, we deliver cost-efficient solutions, achieving 25% lower production costs compared to global competitors.
1. Q: What are the primary applications of 6-inch SiC epitaxial wafers?
A: They are widely used in new energy vehicles (main drive inverters, fast charging systems), photovoltaic inverters, 5G communication base stations, and industrial motor drives, enhancing energy efficiency and reducing power consumption .
2. Q: How to minimize defect density in 6-inch SiC epitaxial wafers?
A: Defect density is controlled through C/Si ratio optimization (0.9), growth temperature regulation (1590°C), and magnetic-field-assisted growth, reducing fatal defects (e.g., triangular defects) to <0.4 cm⁻² .
Tags: #2inch 3inch 4inch 6inch, #SiC Epitaxial Wafers, #Silicon Carbide#4H-N, #Conductive, #Production Grade, #MOS Grade, #Diameter 150mm, #N type/P type, #5G Communication
